STW5NB90 n - channel 900v - 2.3 w - 5.6a - to-247 powermesh ? mosfet preliminary data n typical r ds(on) = 2.3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, sgs-thomson has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termination structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive n high current, high speed switching ? internal schematic diagram june 1998 1 2 3 to-247 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 900 v v dgr drain- gate voltage (r gs = 20 k w ) 900 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 5.6 a i d drain current (continuous) at t c = 100 o c 3.3 a i dm ( ) drain current (pulsed) 22.4 a p tot total dissipation at t c = 25 o c160w derating factor 1.28 w/ o c dv/dt ( 1 ) peak diode recovery voltage slope 4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 5 a, 200 a/ m s, v dd v (br)dss , tj t jmax type v dss r ds(on) i d STW5NB90 900 v < 2.5 w 5.6 a 1/5
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.78 30 0.1 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive 5.6 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 284 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 900 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d =2.5 a 2.3 2.5 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5.6 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 2.5 a 2.5 4.1 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1250 128 13 1625 170 20 pf pf pf STW5NB90 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 450 v i d = 2.5 a r g = 4.7 w v gs = 10 v 18 9 26 13 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge vdd = 720 v i d =5 a v gs = 10 v 33 10 13 47 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 720 v i d = 5 a r g = 4.7 w v gs = 10 v 13 10 17 18 14 24 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 5.6 22.4 a a v sd ( * ) forward on voltage i sd = 5 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 700 5.4 16 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STW5NB90 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data STW5NB90 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rig hts of stmicroelectroni cs. spe cification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. st microelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of s tmicroelectronics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . STW5NB90 5/5
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